4 research outputs found
Vertical MoS<sub>2</sub> Nanosheets via Space-Confined CVD for Room Temperature Photo-Enhanced Highly Selective Triethylamine Sensing
The layered structure and atomic thinness of transition
metal dichalcogenide
(TMD) semiconductors make them attractive for various applications.
By precise control of the morphology of these materials on the nanoscale,
the material can be engineered for specific functional device applications.
The present study represents a systematic growth procedure, wherein
a space-confined chemical vapor deposition (CVD) route allowed us
to synthesize vertically oriented molybdenum disulfide (MoS2) nanosheets with high phase selectivity. While achieving control
over the growth of vertical MoS2 (V–MoS2) within a single growth run has many challenges, we demonstrate
vertical growth of MoO2 and its subsequent transformation
to either a MoO2/MoS2 core–shell structure
or vertical MoS2 nanosheets on a SiO2/Si substrate,
by modulating the sulfur concentration during the growth process.
As a morphologically rich structure, the edge-enhanced MoS2 flower-like structure offered high selectivity toward triethylamine
(TEA) sensing over many other volatile organic chemicals (VOCs) studied.
The VOC sensing study showed ultrahigh selectivity and sensitivity
(9.35 ± 1.20) × 10–4 ppm–1 toward TEA under ultraviolet light exposure. The vertical MoS2 nanosheets with enhanced hydrophobic property showed excellent
ambient stability, suggesting its potential for the development of
sensors for room-temperature triethylamine detection at the ppm level